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28F0101024K 参数 Datasheet PDF下载

28F0101024K图片预览
型号: 28F0101024K
PDF下载: 下载PDF文件 查看货源
内容描述: 28F010 1024K ( 128K ×8 )的CMOS FLASH MEMORY [28F010 1024K (128K X 8) CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 33 页 / 894 K
品牌: INTEL [ INTEL ]
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E
28F010  
Table 3. Command Definitions  
First Bus Cycle  
Second Bus Cycle  
Bus  
Cycles  
Req’d  
Command  
Operation(1) Address(2) Data(3)  
Operation(1)  
Address(2) Data(3)  
Read Memory  
1
3
Write  
Write  
X
00H  
90H  
Read Intelligent  
Identifier Codes(4)  
IA  
Read  
Write  
IA  
X
ID  
Set-Up  
Erase/Erase(5)  
2
Write  
X
20H  
20H  
Erase Verify(5)  
2
2
Write  
Write  
EA  
X
A0H  
40H  
Read  
Write  
X
EVD  
PD  
Set-Up Program/  
Program(6)  
PA  
Program Verify(6)  
2
2
Write  
Write  
X
X
C0H  
FFH  
Read  
Write  
X
X
PVD  
FFH  
Reset(7)  
NOTES:  
1. Bus operations are defined in Table 2.  
2. IA = Identifier address: 00H for manufacturer code, 01H for device code.  
EA = Erase Address: Address of memory location to be read during erase verify.  
PA = Program Address: Address of memory location to be programmed.  
Addresses are latched on the falling edge of the WE# pulse.  
3. ID = Identifier Data: Data read from location IA during device identification (Mfr = 89H, Device = B4H).  
EVD = Erase Verify Data: Data read from location EA during erase verify.  
PD = Program Data: Data to be programmed at location PA. Data is latched on the rising edge of WE#.  
PVD = Program Verify Data: Data read from location PA during program verify. PA is latched on the Program command.  
4. Following the Read Intelligent ID command, two read operations access manufacturer and device codes.  
5. Figure 5 illustrates the 28F010 Quick-Erase Algorithm flowchart.  
6. Figure 4 illustrates the 28F010 Quick-Pulse Programming Algorithm flowchart.  
7. The second bus cycle must be followed by the desired command register write.  
2.2.2.1  
Read Command  
2.2.2.2  
Intelligent Identifier Command  
While VPP is high, for erasure and programming,  
memory contents can be accessed via the Read  
command. The read operation is initiated by writing  
00H into the command register. Microprocessor  
read cycles retrieve array data. The device remains  
enabled for reads until the command register  
contents are altered.  
Flash memories are intended for use in applications  
where the local CPU alters memory contents. As  
such, manufacturer and device codes must be  
accessible while the device resides in the target  
system. PROM programmers typically access  
signature codes by raising A9 to a high voltage.  
However, multiplexing high voltage onto address  
lines is not a desired system design practice.  
The default contents of the register upon VPP  
power-up is 00H. This default value ensures that no  
spurious alteration of memory contents occurs  
during the VPP power transition. Where the VPP  
supply is hardwired to the 28F010, the device  
powers-up and remains enabled for reads until the  
command register contents are changed. Refer to  
the AC Characteristics—Read-Only Operations and  
waveforms for specific timing parameters.  
The 28F010 contains an intelligent identifier  
operation to supplement traditional PROM-  
programming methodology. The operation is  
initiated by writing 90H into the command register.  
Following the command Write, a read cycle from  
address 0000H retrieves the manufacturer code of  
89H. A read cycle from address 0001H returns the  
device code of B4H. To terminate the operation, it  
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