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IL9270 参数 Datasheet PDF下载

IL9270图片预览
型号: IL9270
PDF下载: 下载PDF文件 查看货源
内容描述: DTMF接收的高性能硅栅CMOS [DTMF RECEIVER High-Performance Silicon-Gate CMOS]
分类和应用:
文件页数/大小: 12 页 / 716 K
品牌: INTEGRAL [ INTEGRAL CORP. ]
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IL9270  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
-0.3 to +6.0  
-0.3 to VCC +0.3  
10  
Unit  
V
VCC  
VIN  
IIN  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC InputCurrent, per Pin  
V
mA  
mW  
°C  
PD  
Power Dissipation in Still Air,  
Storage Temperature  
Plastic DIP**  
500  
Tstg  
-65 to +150  
*
Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
**  
Derating: -10 mW  
/
°C  
from 65°C to 70°C.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
VCC  
VIN  
Parameter  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
Operating Temperature  
Min  
4.75  
1.5  
-10  
-
Max  
5.25  
3.5  
Unit  
V
V
TA  
+70  
45  
°C  
mW  
ns  
PO  
Power Consumption ( f = 3.579 MHz, VCC = 5 V)  
Input Rise and Fall Time  
tr, tf  
0
110  
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.  
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this  
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND(VIN or  
V
OUT)VCC.  
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused  
outputs must be left open.