TLE9879QXA40
Memory Control Unit
11.3
NVM Module (Flash Memory)
The Flash Memory provides an embedded user-programmable non-volatile memory, allowing fast and reliable
storage of user code and data.
Features
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In-system programming via LIN (Flash Mode) and SWD
Error Correction Code (ECC) for detection of single-bit and double-bit errors and dynamic correction of single
Bit errors.
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Interrupts and signals double-bit error by NMI
Program width of 128 byte (page)
Minimum erase width of 128 bytes (page)
Integrated hardware support for EEPROM emulation
8 byte read access
Physical read access time: 75 ns
Code read access acceleration integrated; read buffer and automatic pre-fetch
Page program time: 3 ms
Page erase (128 bytes) and sector erase (4K bytes) time: 4ms
Note: The user has to ensure that no flash operations which change the content of the flash get interrupted at any
time.
The clock for the NVM is supplied with the system frequency fsys. Integrated firmware routines are provided to
erase NVM, and other operations including EEPROM emulation are provided as well.
Data Sheet
39
Rev. 1.0, 2015-04-30
INFINEON [ Infineon ]
