TLE 4726
Characteristics (cont’d)
VS = 40 V; VL = 5 V; – 25 °C ≤ Tj ≤ 125 °C
Parameter
Symbol
Limit Values
Unit Test Condition
min. typ.
max.
Power Outputs
Diode Transistor Sink Pair
(D13, T13; D14, T14; D23, T23; D24, T24)
Saturation voltage
Saturation voltage
Reverse current
Forward voltage
Forward voltage
Vsatl
Vsatl
IRl
VFl
VFl
–
–
–
–
–
0.3
0.5
–
0.9
1
0.6
1
300
1.3
1.4
V
V
µA
V
V
IQ = – 0.5 A
IQ = – 0.75 A
VQ = 40 V
IQ = 0.5 A
IQ = 0.75 A
Diode Transistor Source Pair
(D11, T11; D12, T12; D21, T21; D22, T22)
Saturation voltage
Saturation voltage
Saturation voltage
Saturation voltage
VsatuC
VsatuD
VsatuC
VsatuD
–
–
–
–
0.9
0.3
1.1
0.5
1.2
0.7
1.4
1
V
V
V
V
IQ = 0.5 A;
charge
IQ = 0.5 A;
discharge
IQ = 0.75 A;
charge
IQ = 0.75 A;
discharge
VQ = 0 V
IQ = – 0.5 A
IQ = – 0.75 A
Reverse current
Forward voltage
Forward voltage
IRu
VFu
VFu
–
–
–
–
–
1
1.1
1
300
1.3
1.4
2
µA
V
V
Diode leakage current ISL
mA IF = – 0.75 A
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and
the given supply voltage.
Data Sheet
8
1999-09-15
INFINEON [ Infineon ]
