IRF7313PbF-1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
30
1.0
Typ. Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
0.022 V/°C Reference to 25°C, I
D
= 1mA
0.023 0.029
V
GS
= 10V, I
D
= 5.8A
Ω
0.032 0.046
V
GS
= 4.5V, I
D
= 4.7A
V
V
DS
= V
GS
, I
D
= 250µA
14
S
V
DS
= 15V, I
D
= 5.8A
1.0
V
DS
= 24V, V
GS
= 0V
µA
25
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
22
33
I
D
= 5.8A
2.6 3.9
nC V
DS
= 15V
6.4 9.6
V
GS
= 10V, See Fig. 10
8.1
12
V
DD
= 15V
8.9
13
I
D
= 1.0A
ns
26
39
R
G
= 6.0Ω
17
26
R
D
= 15Ω
650
V
GS
= 0V
320
pF
V
DS
= 25V
130
= 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
2.5
A
30
1.0
68
87
V
ns
nC
0.78
45
58
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 10mH, R
G
= 25Ω, I
AS
= 4.0A.
I
SD
≤
4.0A, di/dt
≤
74A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
2
©
2013 International Rectifier
November 14, 2013
INFINEON [ INFINEON TECHNOLOGIES AG ]
