IRF7313PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
0.029
22
6.5
V
Ω
nC
A
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
Q
g (typical)
I
D
(@T
A
= 25°C)
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7313PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7313PbF-1
IRF7313TRPbF-1
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25°C
T
A
= 70°C
Maximum
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
30
± 20
6.5
5.2
30
2.5
2.0
1.3
82
4.0
0.20
5.8
-55 to + 150
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
R
θJA
Limit
62.5
Units
°C/W
1
©
2013 International Rectifier
November 14, 2013
INFINEON [ INFINEON TECHNOLOGIES AG ]
