IRF7201PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030
––– ––– 0.050
1.0 ––– –––
5.8 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 10V, ID = 7.3A
GS = 4.5V, ID = 3.7A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 15V, ID = 2.3A
Forward Transconductance
VDS = 24V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 19
28
ID = 4.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.3 3.5
––– 6.3 9.5
––– 7.0 –––
––– 35 –––
––– 21 –––
––– 19 –––
––– 550 –––
––– 260 –––
––– 100 –––
nC VDS = 24V
VGS = 10V, See Fig. 10
VDD = 15V
ID = 4.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 3.2Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
2.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
58
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.2
––– 48 73
––– 73 110
V
TJ = 25°C, IS = 4.6A, VGS = 0V
ns
TJ = 25°C, IF = 4.6A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. (See fig. 11)
VDD = 15V, starting TJ = 25°C, L = 6.6mH
RG = 25Ω, IAS = 4.6A. (See Figure 8)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ When mounted on 1 inch square copper board, t<10 sec
2
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