PD - 95164
Advanced Process Technology
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Ultra Low On-Resistance
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Dual N and P Channel Mosfet
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
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Lead-Free
Description
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HEXFET
®
Power MOSFET
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
6
5
D1
D1
D2
D2
N-Ch
V
DSS
R
DS(on)
I
D
25V
0.10Ω
3.5A
P-Ch
-25V
0.25Ω
-2.3A
P-CHANNEL MOSFET
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
3.5
2.8
14
2.0
0.016
± 20
3.0
-55 to + 150
-3.0
P-Channel
-2.3
-1.8
-10
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
R
θJA
Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max.
62.5
Units
°C/W
www.irf.com
1
10/6/04
INFINEON [ INFINEON TECHNOLOGIES AG ]
