TrenchStop
®
Series
IKW75N60T
q
t
d(off)
t,
SWITCHING TIMES
100ns
t
f
t,
SWITCHING TIMES
t
d(off)
100ns
t
f
t
r
t
d(on)
t
d(on)
t
r
10ns
0A
40A
80A
120A
10ns
5Ω
10Ω
15Ω
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 5Ω,
Dynamic test circuit in Figure E)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 75A,
Dynamic test circuit in Figure E)
7V
t
d(off)
V
GE(th),
GATE
-
EMITT TRSHOLD VOLTAGE
6V
m ax.
5V
4V
3V
2V
1V
0V
-50°C
m in.
typ.
t,
SWITCHING TIMES
100ns
t
r
t
f
t
d(on)
25°C
50°C
75°C
100°C 125°C 150°C
0°C
50°C
100°C
150°C
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 10A,
R
G
=5Ω,
Dynamic test circuit in Figure E)
T
J
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I
C
= 1.2mA)
Power Semiconductors
6
Rev. 2.6 Sep 08
INFINEON [ INFINEON TECHNOLOGIES AG ]
