TrenchStop
®
Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
=0 V,
I
C
=0.2mA
V
CE(sat)
V
G E
= 15 V,
I
C
=75A
T
j
= 25°C
T
j
= 175
°C
Diode forward voltage
V
F
V
G E
=0 V,
I
F
= 7 5 A
T
j
= 25°C
T
j
= 175
°C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
=1.2mA,V
C E
=V
G E
V
C E
= 60 0 V
,
V
G E
=0 V
T
j
= 25°C
T
j
= 175
°C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C(SC)
V
G E
=15V,t
S C
≤5 µs
V
C C
= 400 V,
T
j
≤
150°C
-
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
=25V,
V
G E
=0 V,
f=1MHz
V
C C
= 48 0 V,
I
C
=75A
V
G E
=15V
-
-
-
-
-
I
GES
g
fs
R
Gint
V
C E
=0 V,V
G E
=20V
V
C E
=20V,
I
C
=75A
-
-
-
-
-
-
4.1
-
-
600
Symbol
Conditions
R
thJA
R
thJCD
R
thJC
Symbol
Conditions
IKW75N60T
q
Max. Value
0.35
0.6
40
Unit
K/W
Value
min.
Typ.
-
1.5
1.9
1.65
1.6
4.9
max.
-
2.0
-
2.0
-
5.7
Unit
V
µA
-
-
-
41
-
40
1000
100
-
nA
S
Ω
4620
288
137
470
13
690
-
-
-
-
-
-
pF
nC
nH
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.6 Sep 08
Power Semiconductors
INFINEON [ INFINEON TECHNOLOGIES AG ]
