TrenchStop Series
IKW75N60T
q
D=0.5
D=0.5
Z
thJC
,
TRANSIENT THERMAL RESISTANCE
10 K/W
-1
0.2
0.1
0.05
R
,(K/W)
0.1968
0.0733
0.0509
0.02
0.0290
Z
thJC
,
TRANSIENT THERMAL RESISTANCE
0.2
10 K/W
-1
0.1
0.05
0.02
0.01
10 K/W
-2
0.115504
0.009340
0.000823
0.000119
R
2
τ
,
(s)
0.01
R
1
R
,(K/W)
0.1846
0.1681
0.1261
0.0818
0.04
R
1
τ
,
(s)
0.110373
0.015543
0.001239
0.000120
0.000008
R
2
10 K/W
-2
C
1
=
τ
1
/R
1
C
2
=
τ
2
/R
2
C
1
=
τ
1
/R
1
C
2
=
τ
2
/R
2
single pulse
10 K/W
1µs
-3
single pulse
100ns 1µs 10µs 100µs 1ms 10ms100ms
10µs 100µs
1ms
10ms 100ms
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(
D = t
p
/
T
)
t
P
,
PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(
D
=
t
P
/
T
)
Q
rr
,
REVERSE RECOVERY CHARGE
200ns
t
rr
,
REVERSE RECOVERY TIME
T
J
=175°C
5µC
T
J
=175°C
4µC
150ns
3µC
100ns
T
J
=25°C
50ns
2µC
T
J
=25°C
1µC
0ns
1000A/µs
1500A/µs
0µC
1000A/µs
1500A/µs
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=400V,
I
F
=75A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
= 400V,
I
F
= 75A,
Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.4 May 06
INFINEON [ INFINEON TECHNOLOGIES AG ]
