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IKW75N60T 参数 Datasheet PDF下载

IKW75N60T图片预览
型号: IKW75N60T
PDF下载: 下载PDF文件 查看货源
内容描述: 低损耗DUOPACK : IGBT的沟槽场终止和技术,软,恢复快反平行EMCON何二极管 [Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode]
分类和应用: 二极管双极性晶体管
文件页数/大小: 13 页 / 411 K
品牌: INFINEON [ Infineon ]
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IKW75N60T  
q
TrenchStop Series  
TJ=175°C  
-1200A/µs  
-1000A/µs  
-800A/µs  
-600A/µs  
-400A/µs  
-200A/µs  
0A/µs  
TJ=175°C  
60A  
50A  
40A  
30A  
20A  
10A  
0A  
TJ=25°C  
TJ=25°C  
1000A/µs  
1500A/µs  
1000A/µs  
1500A/µs  
diF/dt, DIODE CURRENT SLOPE  
diF/dt, DIODE CURRENT SLOPE  
Figure 25. Typical reverse recovery current  
as a function of diode current  
slope  
Figure 26. Typical diode peak rate of fall of  
reverse recovery current as a  
function of diode current slope  
(VR=400V, IF=75A,  
(VR = 400V, IF = 75A,  
Dynamic test circuit in Figure E)  
Dynamic test circuit in Figure E)  
200A  
TJ=25°C  
IF=150A  
2.0V  
1.5V  
1.0V  
0.5V  
0.0V  
175°C  
150A  
75A  
37.5A  
100A  
50A  
0A  
0°C  
50°C  
100°C  
150°C  
0V  
1V  
2V  
VF, FORWARD VOLTAGE  
Figure 27. Typical diode forward current as  
a function of forward voltage  
TJ, JUNCTION TEMPERATURE  
Figure 28. Typical diode forward voltage as a  
function of junction temperature  
10  
Rev. 2.4 May 06  
Power Semiconductors