IKW75N60T
q
TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td(on)
tr
td(off)
tf
Eon
Eoff
Et s
-
-
-
-
-
-
-
33
36
330
35
2.0
2.5
4.5
-
-
-
-
-
-
-
ns
Tj =25°C,
V
V
CC =400V,IC =75A,
G E=0/15V,
RG=5Ω,
Lσ 1) =100nH,
Cσ 1) =39pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
trr
Qrr
-
-
-
-
121
2.4
38.5
921
-
-
-
-
ns
µC
A
Tj =25°C,
VR =400V, IF =75A,
diF/dt=1460A/µs
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr /dt
A/µs
recovery current during tb
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td(on)
tr
td(off)
tf
Eon
Eoff
Et s
-
-
-
-
-
-
-
32
37
363
38
2.9
2.9
5.8
-
-
-
-
-
-
-
ns
Tj =175°C,
V
V
CC =400V,IC =75A,
G E=0/15V,
RG= 5Ω
Lσ 1) =100nH,
Cσ 1) =39pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
trr
Qrr
-
-
-
-
182
5.8
56.2
1013
-
-
-
-
ns
µC
A
Tj =175°C
VR =400V, IF =75A,
diF/dt=1460A/µs
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr /dt
A/µs
recovery current during tb
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Rev. 2.4 May 06
Power Semiconductors
INFINEON [ Infineon ]
