IKFW60N60DH3E
TRENCHSTOPTMꢀAdvancedꢀIsolation
500
450
400
350
300
250
200
150
100
50
Cies
Coes
Cres
1E+4
1000
100
10
0
10
20
30
10
12
14
16
18
20
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
(VCE≤400V,ꢀstartꢀatTj=25°C)
14
12
10
8
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
6
0.01
4
i:
ri[K/W]: 3.0E-3 0.104852 0.13662 0.1914
τi[s]: 1.6E-5 2.6E-4 2.2E-3
1
2
3
4
5
6
7
0.26906 0.3091
0.022616
0.018514 0.201746 0.902516 15.90837
2
0.001
1E-6 1E-5 1E-4 0.001 0.01
10
11
12
13
14
15
0.1
1
10
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof Figure 20. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
gate-emitterꢀvoltage
functionꢀofꢀpulseꢀwidth
(VCE≤400V,ꢀstartꢀatꢀTj≤150°C)
(D=tp/T)
Datasheet
10
Vꢀ2.1
2017-09-21
INFINEON [ Infineon ]
