IAUC60N04S6L030H
13 Avalanche energy
14 Drain-source breakdown voltage
EAS = f(T j)
VBR(DSS) = f(T j); I D = 1 mA
44
500
400
5 A
42
40
38
300
200
10 A
100
20 A
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 40 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
V GS
Qg
8 V
32 V
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
0
10
20
30
Qgate [nC]
Rev. 1.0
page 7
2020-09-18