BTS 723 GW
Parameter and Conditions, each of the two channels
Symbol
Values
Unit
at Tj = -40...+150°C, V = 24 V unless otherwise specified
bb
min
typ
Max
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
2.5
4.0
2.9
4.2
--
--
A
7)
Device on PCB , T = 85°C, T ≤ 150°C
a
j
)
Output current while GND disconnected or pulled up 8 ;
IL(GNDhigh)
--
--
1.0
mA
V
bb
= 30 V, V = 0,
IN
see diagram page 11
Turn-on time9)
Turn-off time
RL = 12 Ω
IN
IN
to 90% VOUT: ton
to 10% VOUT: toff
--
--
--
--
55
95
µs
Slew rate on9)
10 to 30% VOUT, RL = 12 Ω:
Slew rate off9)
70 to 40% VOUT, RL = 12 Ω:
dV/dton
1.0
1.0
--
--
5 V/µs
5 V/µs
-dV/dtoff
Operating Parameters
Operating voltage
Vbb(on)
7.0
--
58
V
V
Undervoltage restart of charge pump
T =-40...+25°C: Vbb(ucp)
--
--
4
--
5.5
7.0
j
T =+150°C:
j
Overvoltage protection10)
Vbb(AZ)
58.5
63
13
69
V
Ibb = 40 mA
Standby current11)
Tj =-40°C...+25°C: Ibb(off)
--
--
--
23
23
35
µA
)
Tj =+125°C12
Tj =+150°C:
:
VIN = 0; see diagram page 10
25
3
Off-State output current (included in Ibb(off)
VIN = 0; each channel
)
IL(off)
--
--
µA
Operating current 13), VIN = 5V,
IGND
--
--
1.0
2.0
1.5
3.0
mA
one channel on:
all channels on:
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
connection. PCB is vertical without blown air. See page 15
) not subject to production test, specified by design
7)
8
bb
9)
See timing diagram on page 13.
Supply voltages higher than Vbb(AZ) require an external current limit for the GND; a 150Ω resistor is
10)
recommended. See also V
Measured with load; for the whole device; all channels off
) not subject to production test, specified by design
in table of protection functions and circuit diagram on page 10.
ON(CL)
11)
12
13)
Add I , if I > 0
ST
ST
Infineon Technologies AG
6
2003-Oct-01
INFINEON [ Infineon ]
