BTS 723 GW
Parameter and Conditions,
each of the two channels
at T
j
= -40...+150°C,
V
bb
= 24 V unless otherwise specified
Symbol
Values
min
typ
Max
2.5
4.0
--
2.9
4.2
--
--
--
1.0
Unit
Nominal load current
Device on PCB
7
),
T
a
=
85°C,
T
j
≤
150°C
Vbb = 30 V,
V
IN = 0,
see diagram page 11
Turn-on time
9
)
one channel active:
I
L(NOM)
two parallel channels active:
A
mA
µs
V/µs
V/µs
Output current
while GND disconnected or pulled up
8
)
;
I
L(GNDhigh)
Turn-off time
R
L
= 12
Ω
Slew rate on
9
)
10 to 30%
V
OUT
,
R
L
= 12
Ω:
Slew rate off
9
)
70 to 40%
V
OUT
,
R
L
= 12
Ω:
IN
IN
to 90%
V
OUT
:
t
on
to 10%
V
OUT
:
t
off
dV/dt
on
-dV/dt
off
--
--
1.0
1.0
--
--
--
--
55
95
5
5
Operating Parameters
Operating voltage
Undervoltage restart of charge pump
T
j
=-40...+25°C:
T
j
=+150°C:
Overvoltage protection
10
)
I
bb
= 40 mA
Standby current
11
)
T
j
=-40°C...+25°C
)
:
T
j
=+125°C
12
:
V
IN
= 0;
see diagram page 10
T
j
=+150°C:
Off-State output current (included in
I
bb(off)
)
V
IN
= 0; each channel
Operating current
13)
,
V
IN
= 5V,
one channel on:
all channels on:
V
bb(on)
V
bb(ucp)
V
bb(AZ)
I
bb(off)
I
L(off)
7.0
--
--
58.5
--
--
--
--
--
4
--
63
13
25
3
58
5.5
7.0
69
23
23
35
--
V
V
V
µA
µA
I
GND
--
--
1.0
2.0
1.5
3.0
mA
7
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
8
) not subject to production test, specified by design
9
) See timing diagram on page 13.
10
) Supply voltages higher than V
bb(AZ)
require an external current limit for the GND; a 150Ω resistor is
recommended. See also
V
ON(CL)
in table of protection functions and circuit diagram on page 10.
11
) Measured with load; for the whole device; all channels off
12
) not subject to production test, specified by design
13
) Add
I
, if
I
ST
ST
> 0
Infineon Technologies AG
6
2003-Oct-01
INFINEON [ INFINEON TECHNOLOGIES AG ]
