BTS721L1
Input circuit (ESD protection),
IN1...4
R
IN
I
RI
Logic
R
ST
ST
V
Z2
Overvoltage protection of logic part
GND1/2 or GND3/4
+ V bb
ESD-ZD
I
GND
IN
I
I
IN
V
ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a drift of
the zener voltage (increase of up to 1 V).
Z1
GND
R
GND
Signal GND
Status output,
ST1/2 or ST3/4
+5V
V
Z1
= 6.1 V typ., V
Z2
= 47 V typ., R
I
= 3.5 kΩ typ.,
R
GND
= 150
Ω
R
ST(ON)
ST
Reverse battery protection
± 5V
- Vbb
GND
ESD-
ZD
R
ST
IN
ST
R
I
Logic
OUT
Power
Inverse
Diode
ESD-Zener diode: 6.1 V typ., max 5.0 mA; R
ST(ON)
< 380
Ω
at 1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may resul
t
in
a drift of the zener voltage (increase of up to 1 V).
GND
Inductive and overvoltage output clamp,
OUT1...4
+Vbb
VZ
V
ON
OUT
R
GND
Signal GND
R
L
Power GND
R
GND
= 150
Ω,
R
I
= 3.5 kΩ typ,
Temperature protection is not active during inverse current
operation.
PROFET
Power GND
V
ON
clamped to
V
ON(CL)
= 47 V typ.
Semiconductor Group
8
2003-Oct-01
INFINEON [ INFINEON TECHNOLOGIES AG ]
