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BTS721L1 参数 Datasheet PDF下载

BTS721L1图片预览
型号: BTS721L1
PDF下载: 下载PDF文件 查看货源
内容描述: 四通道海赛德智能电源开关 [Smart Four Channel Highside Power Switch]
分类和应用: 外围驱动器驱动程序和接口开关接口集成电路电源开关光电二极管PC
文件页数/大小: 15 页 / 359 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BTS721L1
Parameter and Conditions,
each of the four channels
at T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
--
--
12
Unit
µA
Leakage output current (included in
I
bb(off)
)
I
L(off)
V
IN
= 0
Operating current
9)
,
V
IN
= 5V,
T
j
=-40...+150°C
I
GND
=
I
GND1/2
+
I
GND3/4
,
one channel on:
I
GND
four channels on:
Protection Functions
10)
Initial peak short circuit current limit,
(see timing
diagrams, page 12)
--
--
2
8
3
12
mA
each channel,
T
j
=-40°C:
I
L(SCp)
11
18
25
9
14
22
T
j
=25°C:
5
8
14
T
j
=+150°C:
two parallel channels
twice the current of one channel
four parallel channels
four times the current of one channel
Repetitive short circuit current limit,
T
j
=
T
jt
each channel
I
L(SCr)
--
8
--
--
8
--
two parallel channels
--
8
--
four parallel channels
(see timing diagrams, page 12)
A
A
Initial short circuit shutdown time
T
j,start
=-40°C:
t
off(SC)
T
j,start
= 25°C:
V
ON(CL)
T
jt
T
jt
--
--
--
150
--
3.8
3
47
--
10
--
--
--
--
--
ms
(see page 12 and timing diagrams on page 12)
Output clamp (inductive load switch off)
11)
at V
ON(CL)
= V
bb
- V
OUT
Thermal overload trip temperature
Thermal hysteresis
Reverse Battery
Reverse battery voltage
12
)
Drain-source diode voltage
(V
out
> V
bb
)
I
L
= - 2.9 A,
T
j
= +150°C
V
°C
K
-V
bb
-V
ON
--
--
--
610
32
--
V
mV
9
)
Add
I
ST
, if
I
ST
> 0
10
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11
) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
12
) Requires a 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
Semiconductor Group
5
2003-Oct-01