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BTS640S2 参数 Datasheet PDF下载

BTS640S2图片预览
型号: BTS640S2
PDF下载: 下载PDF文件 查看货源
内容描述: 智能检测高侧电源开关 [Smart Sense High-Side Power Switch]
分类和应用: 开关接口集成电路电源开关驱动局域网
文件页数/大小: 15 页 / 240 K
品牌: INFINEON [ Infineon ]
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BTS 640 S2  
Truth Table  
Input  
level  
Output  
level  
Status  
level  
Current  
Sense  
I
IS  
Normal  
L
H
L
H
L
L
H
L
H
L
H
L
H
H
H
H
0
operation  
Current-  
limitation  
Short circuit to  
GND  
nominal  
0
0
0
0
16  
H
)
L
Over-  
temperature  
Short circuit to  
L
H
L
L
L
H
H
H
H
0
0
0
17)  
L
18)  
V
bb  
H
L
<nominal  
19  
20)  
Open load  
L
H
0
0
)
L
H (L  
L
)
H
L
L
L
L
L
Undervoltage  
Overvoltage  
L
H
L
H
L
H
L
H
L
0
0
0
0
0
Negative output  
voltage clamp  
H
L = "Low" Level  
H = "High" Level  
X = don't care  
Z = high impedance, potential depends on external circuit  
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)  
16)  
The voltage drop over the power transistor is Vbb-VOUT>typ.3V. Under this condition the sense current IIS is  
zero  
17)  
An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND  
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.  
18)  
19)  
20)  
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.  
Power Transistor off, high impedance  
with external resistor between pin 4 and pin 6&7  
Semiconductor Group  
Page 7  
2003-Oct-01  
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