BSS138N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
32
7.2
2.8
2.3
3.0
6.7
8.2
41
9.5
3.8
3.5
4.5
10
pF
ns
V
GS=0 V, V DS=25 V,
C oss
Crss
t d(on)
t r
f =1 MHz
V
DD=30 V, V GS=10 V,
I D=0.23 A, R G=6 Ω
t d(off)
t f
Turn-off delay time
Fall time
12.3
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.10
0.3
1.0
3.3
0.14 nC
0.4
Q gd
V
V
DD=48 V, I D=0.23 A,
GS=0 to 10 V
Q g
1.4
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.23
0.92
T A=25 °C
I S,pulse
V GS=0 V, I F=0.23 A,
T j=25 °C
V SD
Diode forward voltage
-
0.83
1.2
V
t rr
Reverse recovery time
-
-
9.1
3.3
14.5 ns
V R=30 V, I F=0.23 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
5
nC
Rev. 2.85
page 3
2012-04-04
INFINEON [ Infineon ]
