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BSS138NL6433 参数 Datasheet PDF下载

BSS138NL6433图片预览
型号: BSS138NL6433
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3]
分类和应用: 光电二极管晶体管
文件页数/大小: 9 页 / 462 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BSS138N
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=0.23 A,
T
j
=25 °C
V
R
=30 V,
I
F
=0.23 A,
di
F
/dt =100 A/µs
T
A
=25 °C
-
-
-
-
-
-
-
0.83
9.1
3.3
0.23
0.92
1.2
14.5
5
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=48 V,
I
D
=0.23 A,
V
GS
=0 to 10 V
-
-
-
-
0.10
0.3
1.0
3.3
0.14
0.4
1.4
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V,
V
GS
=10 V,
I
D
=0.23 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
32
7.2
2.8
2.3
3.0
6.7
8.2
41
9.5
3.8
3.5
4.5
10
12.3
ns
pF
Values
typ.
max.
Unit
Rev. 2.85
page 3
2012-04-04