Rev. 1.41
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V,
V
GS
=10V,
I
D
=0.17A,
R
G
=6Ω
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.14A
V
GS
=0,
V
DS
=25V,
f=1MHz
BSS123
Symbol
Conditions
min.
0.09
-
-
-
-
-
-
-
Values
typ.
0.19
55
8.5
5
2.7
3.1
9.9
25
max.
-
69
10.6
6.3
4
4.6
14.8
37
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
V
DD
=80V,
I
D
=0.17A
-
-
-
-
0.055
0.77
1.78
2.6
0.082 nC
1.15
2.67
-
V
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Q
g
V
DD
=80V,
I
D
=0.17A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=80V,
I
D
= 0.17 A
I
S
T
A
=25°C
-
-
-
-
0.81
27.6
10.5
0.17
0.68
1.2
41.1
15.7
A
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0,
I
F
=
I
S
V
R
=50V,
I
F=
l
S
,
di
F
/dt=100A/µs
-
-
-
V
ns
nC
Page 3
2010-05-12
INFINEON [ INFINEON TECHNOLOGIES AG ]
