Rev. 1.41
BSS123
SIPMOS
Small-Signal-Transistor
Feature
•
N-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Product Summary
V
DS
100
6
0.17
PG-SOT23
V
Ω
A
R
DS(on)
I
D
3
Drain
pin 3
•
Qualified according to AEC Q101
Gate
pin1
Source
pin 2
2
1
VPS05161
Type
BSS123
BSS123
Package
PG-SOT23
PG-SOT23
Pb-free
Yes
Yes
Tape and Reel Information
L6327: 3000 pcs/reel
L6433: 10000 pcs/reel
Marking
SAs
SAs
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
0.17
0.14
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
0.68
6
±20
Class 1a
0.36
-55... +150
55/150/56
W
°C
kV/µs
V
Reverse diode dv/dt
I
S
=0.17A,
V
DS
=80V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
Page 1
2010-05-12