BSP 149
Electrical Characteristics
at
T
j
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
V
GS
=
−
3 V,
I
D
= 0.25 mA
Gate threshold voltage
V
DS
= 3 V,
I
D
= 1 mA
Drain-source cutoff current
V
DS
= 200 V,
V
GS
=
−
3 V
T
j
= 25 ˚C
T
j
= 125 ˚C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
Drain-source on-resistance
V
GS
= 0 V,
I
D
= 0.03 A
Dynamic Characteristics
Forward transconductance
V
DS
≥
2
×
I
D
×
R
DS(on)max
,
I
D
= 0.48 A
Input capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
V
DD
= 30 V,
V
GS
=
−
2 ... + 5 V,
R
GS
= 50
Ω,
I
D
= 0.29 A
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
V
DD
= 30 V,
V
GS
=
−
2 ... + 5 V,
R
GS
= 50
Ω,
I
D
= 0.29 A
Values
typ.
max.
Unit
V
(BR)DSS
200
–
−
1.2
–
−
0.7
V
V
GS(th)
I
DSS
−
1.8
µA
–
–
–
–
10
2.5
0.2
200
nA
–
100
Ω
–
3.5
I
GSS
R
DS(on)
g
fs
0.4
0.75
500
40
12
7
20
60
50
–
S
pF
–
670
60
20
10
30
80
65
ns
C
iss
C
oss
–
C
rss
–
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
Semiconductor Group
2
INFINEON [ INFINEON TECHNOLOGIES AG ]
