SIPMOS
®
Small-Signal Transistor
BSP 149
q
q
q
q
q
q
q
V
DS
200 V
I
D
0.48 A
R
DS(on)
3.5
Ω
N channel
Depletion mode
High dynamic resistance
Available grouped in
V
GS(th)
Type
Ordering
Code
Tape and Reel Information Pin Configuration Marking Package
1
G
2
D
3
S
4
D
BSP 149 SOT-223
BSP 149 Q67000-S071 E6327: 1000 pcs/reel
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current,
T
A
= 28 ˚C
Pulsed drain current,
Max. power dissipation,
Symbol
Values
200
200
±
14
±
20
0.48
1.44
1.8
– 55 … + 150
70
10
E
55/150/56
Unit
V
V
DS
V
DGR
V
GS
V
gs
I
D
I
D puls
P
tot
T
j
,
T
stg
R
thJA
R
thJS
–
–
A
W
˚C
K/W
–
T
A
= 25 ˚C
T
A
= 25 ˚C
Operating and storage temperature range
Thermal resistance
1)
chip-ambient
chip-soldering point
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1)
Transistor on epoxy pcb 40 mm
×
40 mm
×
1.5 mm with 6 cm
2
copper area for drain connection.
Semiconductor Group
1
09.96