Preliminary data
BSO 615 C
SIPMOS
®
Small-Signal-Transistor
Features
•
Dual N- and P -Channel
•
Enhancement mode
Product Summary
Drain source voltage
Drain-Source on-state
resistance
Continuous drain current
N
P
-60
0.3
-2
V
Ω
A
V
DS
R
DS(on)
I
D
60
0.11
3.1
•
Logic Level
•
Avalanche rated
•
dv/dt rated
Type
BSO 615 C
Package
SO 8
Ordering Code
Q67041-S4024
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
N
Continuous drain current
Value
P
Unit
A
I
D
3.1
2.5
-2
-1.6
-8
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current
I
D puls
E
AS
12.4
T
A
= 25 °C
Avalanche energy, single pulse
mJ
47
-
-
70
0.2
kV/µs
6
-
-
6
±20
2
V
W
°C
I
D
= 3.1 A ,
V
DD
= 25 V,
R
GS
= 25
Ω
I
D
= -2 A ,
V
DD
= -25 V,
R
GS
= 25
Ω
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt,
T
jmax
= 150 °C
E
AR
dv/dt
0.2
I
S
= 3.1 A,
V
DS
= 48 V, di/dt = 200 A/µs
I
S
= -2 A,
V
DS
= -48 V, di/dt = -200 A/µs
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
±20
2
T
A
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55...+150
55/150/56
Page 1
1999-10-28
INFINEON [ INFINEON TECHNOLOGIES AG ]
