Preliminary data
Drain-source on-resistance
(N-Ch.)
BSO 615 C
Drain-source on-resistance
(P-Ch.)
R
DS(on)
= f (T
j
)
parameter :
I
D
= 3.1 A ,
V
GS
= 10 V
BSO 615 C
R
DS(on)
= f (T
j
)
parameter :
I
D
= -2 A ,
V
GS
= -10 V
BSO 615 C
Ω
0.30
0.80
Ω
0.60
0.24
R
DS(on)
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-60
-20
20
60
100
°C
R
DS(on)
0.50
98%
0.40
98%
0.30
typ
0.20
typ
0.10
180
0.00
-60
-20
20
60
100
°C
180
T
j
T
j
Gate threshold voltage
(N-Ch.)
Gate threshold voltage
(P-Ch.)
V
GS(th)
=
f
(T j)
parameter:
V
GS
=
V
DS
,
I
D
= 20 µA
3.0
V
GS(th)
=
f
(Tj)
parameter:
V
GS
=
V
DS
,
I
D
= -450 µA
-3.0
V
2.5
V
-2.5
V
GS(th)
V
GS(th)
2.2
2.0
1.8
typ
98%
-2.2
98%
-2.0
-1.8
typ
1.5
1.2
1.0
0.8
0.5
0.2
0.0
-60
-20
20
60
100
160
°C
T
j
2%
-1.5
-1.2
-1.0
-0.8
-0.5
-0.2
0.0
-60
-20
20
60
100
160
°C
T
j
2%
Page 9
1999-10-28
INFINEON [ INFINEON TECHNOLOGIES AG ]
