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BFR181W 参数 Datasheet PDF下载

BFR181W图片预览
型号: BFR181W
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管RF [NPN Silicon RF Transistor]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
文件页数/大小: 6 页 / 506 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BFR181W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 10 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 2 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
I
C
= 2 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
Power gain, maximum available
2)
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
,
f
= 900 MHz
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
,
f
= 1.8 MHz
1
G
2
G
Unit
max.
-
0.45
GHz
pF
typ.
8
0.29
f
T
C
cb
6
-
C
ce
-
0.22
-
C
eb
-
0.35
-
NF
min
-
-
G
ms
-
0.9
1.2
19
-
-
-
dB
dB
G
ma
-
13.5
-
dB
|S
21e
|
2
-
-
15.5
10
-
-
dB
ms
= |S
21
/
S
12
|
1/2
ma = |S21e /
S
12e | (k-(k²-1) )
3
2010-10-08