BFR181W
NPN Silicon RF Transistor
•
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
•
f
T
= 8 GHz,
NF
min
= 0.9 dB at 900 MHz
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR181W
Parameter
Marking
RFs
Pin Configuration
1=B
2=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Symbol
R
thJS
3=C
Value
Package
SOT323
Unit
Maximum Ratings
at
T
A
= 25 °C
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
90 °C
12
20
20
2
20
2
175
150
-65 ... 150
Value
≤
345
V
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
2
For
K/W
S
is measured on the collector lead at the soldering point to the pcb
calculation of
R
thJA
please refer to Application Note AN077 Thermal Resistance
1
2010-10-08
INFINEON [ INFINEON TECHNOLOGIES AG ]
