BC 635
… BC 639
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
BC 635
BC 637
BC 639
45
60
80
–
–
–
–
–
–
Collector-base breakdown voltage
= 100 µA
IC
BC 635
BC 637
BC 639
45
60
100
–
–
–
–
–
–
Emitter-base breakdown voltage
= 10 µA
5
–
–
IE
Collector cutoff current
I
CB0
EB0
VCB = 30 V
–
–
–
–
100
20
nA
µA
V
CB = 30 V, T
A
= 150 ˚C
Emitter cutoff current
I
–
–
100
nA
–
VEB = 4 V
DC current gain
h
FE
IC
IC
IC
= 5 mA; VCE = 2 V
= 150 mA; VCE = 2 V1)
= 500 mA; VCE = 2 V1)
25
40
25
–
–
–
–
250
–
Collector-emitter saturation voltage1)
= 500 mA; I = 50 mA
V
CEsat
BE)
–
–
500
mV
V
IC
B
Base-emitter voltage1)
= 500 mA; VCE = 2 V
V
–
–
1
IC
AC characteristics
Transition frequency
fT
–
100
–
MHz
IC
= 50 mA, VCE = 10 V, f = 20 MHz
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
INFINEON [ Infineon ]
