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BC639 参数 Datasheet PDF下载

BC639图片预览
型号: BC639
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管自动对焦(高电流增益高集电极电流) [NPN Silicon AF Transistors (High current gain High collector current)]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 130 K
品牌: INFINEON [ Infineon ]
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BC 635  
… BC 639  
Maximum Ratings  
Parameter  
Symbol Values  
BC 635  
Unit  
BC 637  
60  
BC 639  
80  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
VCE0  
VCB0  
VEB0  
45  
45  
V
60  
100  
5
I
I
I
I
C
1
A
Peak collector current  
Base current  
CM  
1.5  
B
100  
200  
0.8 (1)  
150  
mA  
Peak base current  
BM  
= 90 ˚C1)  
P
tot  
W
Total power dissipation, T  
C
Junction temperature  
Tj  
˚C  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient1)  
Junction - case2)  
R
th JA  
th JC  
156  
75  
K/W  
R
1)  
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area  
for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.  
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.  
2)  
Semiconductor Group  
2