2N7002
9 Drain-source on-state resistance
R
DS(on)
=f(T
j
);
I
D
=0.3 A;
V
GS
=10 V
10 Typ. gate threshold voltage
V
GS(th)
=f(T
j
);
V
DS
=V
GS
;
I
D
=250 µA
parameter:
I
D
6.0
3.2
5.0
2.8
2.4
4.0
2
98 %
R
DS(on)
[
Ω
]
3.0
V
GS(th)
[V]
98 %
typ
1.6
2%
2.0
typ
1.2
0.8
1.0
0.4
0.0
-60
-20
20
60
100
140
0
-60
-20
20
60
100
140
T
j
[°C]
T
j
[°C]
11 Typ. capacitances
C
=f(V
DS
);
V
GS
=0 V;
f
=1 MHz; T
j
=25°C
12 Forward characteristics of reverse diode
I
F
=f(V
SD
)
parameter:
T
j
10
2
10
1
150 °C, 98%
10
0
25 °C
150 °C
C
[pF]
10
1
I
F
[A]
Ciss
25 °C, 98%
10
-1
Coss
10
-2
Crss
10
0
0
10
20
30
10
-3
0
0.4
0.8
1.2
1.6
V
DS
[V]
V
SD
[V]
Rev. 2.3
page 6
2010-08-26