2N7002DW
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
13
4.1
2.0
3.0
3.3
5.5
3.1
20
pF
ns
V GS=0 V, V DS=25 V,
f =1 MHz
C oss
Crss
t d(on)
t r
6
3
4.5
5
V
DD=30 V, V GS=10 V,
I D=0.5 A, R G=6 Ω
t d(off)
t f
Turn-off delay time
Fall time
9
5
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.05
0.2
0.4
4.0
0.1
0.4
0.6
-
nC
Q gd
V
V
DD=48 V, I D=0.5 A,
GS=0 to 10 V
Q g
V plateau
Gate plateau voltage
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.3
1.2
T A=25 °C
I S,pulse
V GS=0 V, I F=0.5 A,
T j=25 °C
V SD
Diode forward voltage
-
0.96
1.2
V
t rr
Reverse recovery time
-
-
8.5
2.4
13
4
ns
V R=30 V, I F=0.5 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
Rev.2.2
page 3
2011-06-16
INFINEON [ Infineon ]
