2N7002DW
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint2)
R thJA
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS= 0 V, I D=250 µA
Drain-source breakdown voltage
Gate threshold voltage
60
1.5
-
-
2.1
-
-
V
V GS(th)
V DS=VGS, I D=250 µA
2.5
0.1
V DS=60 V, V GS=-10 V,
T j=25 °C
I D (off)
Drain-source leakage current
µA
V
V
DS=60 V,
-
-
5
GS=0 V, T j=150 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
1
10
4
nA
R DS(on) V GS=4.5 V, I D=0.25 A
Drain-source on-state resistance
2.0
1.6
0.36
Ω
V
GS=10 V, I D=0.5 A
-
3
|V DS|>2|I D|R DS(on)max
I D=0.24 A
,
g fs
Transconductance
0.2
-
S
2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70μm thick and 20mm
long.
Rev.2.2
page 2
2011-06-16
INFINEON [ Infineon ]
