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2N7002DWL6327 参数 Datasheet PDF下载

2N7002DWL6327图片预览
型号: 2N7002DWL6327
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6]
分类和应用: 局域网开关光电二极管晶体管
文件页数/大小: 9 页 / 194 K
品牌: INFINEON [ Infineon ]
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2N7002DW  
Unit  
Values  
typ.  
Parameter  
Symbol Conditions  
min.  
max.  
Thermal characteristics  
Thermal resistance,  
junction - minimal footprint2)  
R thJA  
-
-
250 K/W  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS V GS= 0 V, I D=250 µA  
Drain-source breakdown voltage  
Gate threshold voltage  
60  
1.5  
-
-
2.1  
-
-
V
V GS(th)  
V DS=VGS, I D=250 µA  
2.5  
0.1  
V DS=60 V, V GS=-10 V,  
T j=25 °C  
I D (off)  
Drain-source leakage current  
µA  
V
V
DS=60 V,  
-
-
5
GS=0 V, T j=150 °C  
I GSS  
V GS=20 V, V DS=0 V  
Gate-source leakage current  
-
-
1
10  
4
nA  
R DS(on) V GS=4.5 V, I D=0.25 A  
Drain-source on-state resistance  
2.0  
1.6  
0.36  
Ω
V
GS=10 V, I D=0.5 A  
-
3
|V DS|>2|I D|R DS(on)max  
I D=0.24 A  
,
g fs  
Transconductance  
0.2  
-
S
2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70μm thick and 20mm  
long.  
Rev.2.2  
page 2  
2011-06-16