®
ISO 9001 Registered
Process C1004
CMOS 1.0µm
5 Volt Digital
Electrical Characteristics
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
Symbol
VT
N
γ
N
β
N
Leff
N
∆W
N
BVDSS
N
VTF
P(N)
Minimum
0.55
74
0.60
7
10
Typical
0.75
0.60
87
0.75
0.8
T=25
o
C Unless otherwise noted
Maximum
Unit
Comments
0.95
V
100x1.0µm
V
1/2
100x1.0µm
100
µA/V
2
100x100µm
0.90
µm
100x1.0µm
µm
Per side
V
V
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
P
γ
P
β
P
Leff
P
∆W
P
BVDSS
P
VTF
P(P)
Minimum
–0.85
24
0.83
–7
–10
Typical
–1.0
0.4
28
0.98
0.85
Maximum
–1.15
32
1.13
Unit
V
V
1/2
µA/V
2
µm
µm
V
V
Comments
100x1.0µm
100x1.0µm
100x100µm
100x1.0µm
Per side
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
ρ
N-well(f)
ρ
N+
x
jN+
ρ
P+
x
jP+
T
GOX
T
FIELD
ρ
POLY
ρ
M1
ρ
M2
T
PASS
Minimum
0.8
20
60
15
Typical
1.0
35
0.45
80
0.5
20
700
22
50
30
200+900
Maximum
1.22
50
100
30
Unit
KΩ/
Ω/
µm
Ω/
µm
nm
nm
Ω/
mΩ/
mΩ/
nm
Comments
n-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to SIlicon
Metal-2 to Metal-1
Symbol
C
ox
C
M1P
C
MIS
C
MM
Minimum
1.52
Typical
1.64
0.046
0.028
0.038
Maximum
1.82
Unit
fF/µm
2
fF/µm
2
fF/µm
2
fF/µm
2
Comments
© IMP, Inc.
17
IMP [ IMP, INC ]
