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IDT71024S12Y 参数 Datasheet PDF下载

IDT71024S12Y图片预览
型号: IDT71024S12Y
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS静态RAM 1 MEG ( 128K ×8位) [CMOS STATIC RAM 1 MEG (128K x 8-BIT)]
分类和应用:
文件页数/大小: 8 页 / 72 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT71024  
CMOS STATIC RAM 1MEG (128K x 8-BIT)  
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES  
TIMING WAVEFORM OF READ CYCLE NO. 1(1)  
t
RC  
ADDRESS  
tAA  
OE  
OE  
t
(5)  
tOLZ  
CS1  
CS2  
(3)  
t ACS  
(5)  
(5)  
tOHZ  
t CHZ  
t CLZ  
(5)  
HIGH IMPEDANCE  
DATA OUT  
DATAOUT VALID  
t PD  
tPU  
Vcc  
Icc  
Isb  
SUPPLY  
CURRENT  
2964 drw 06  
TIMING WAVEFORM OF READ CYCLE NO. 2(1, 2, 4)  
tRC  
ADDRESS  
tAA  
tOH  
tOH  
DATAOUT VALID  
PREVIOUS DATAOUT VALID  
DATAOUT  
2964 drw 07  
NOTES:  
1. WE is HIGH for Read Cycle.  
2. Device is continuously selected, CS1 is LOW, CS2 is HIGH.  
3. Address must be valid prior to or coincident with the later of CS1 transition LOW and CS2 transition HIGH; otherwise tAA is the limiting parameter.  
4. OE is LOW.  
5. Transition is measured ±200mV from steady state.  
6