IDT71024
CMOS STATIC RAM 1MEG (128K x 8-BIT)
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%, All Temperature Ranges)
71024S12(1)
71024S15
71024S17(3) 71024S20 71024S25(2)
Symbol Parameter
Read Cycle
Min. Max.
Min. Max.
Min.
Max. Min. Max. Min. Max.
Unit
tRC
tAA
Read Cycle Time
12
—
—
3
—
12
12
—
6
15
—
—
3
—
15
15
—
7
17
—
—
3
—
17
17
—
8
20
—
—
3
—
20
20
—
8
25
—
—
3
—
25
25
—
10
10
—
10
—
—
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
tACS
Chip Select Access Time
(4)
tCLZ
tCHZ
tOE
Chip Select to Output in Low-Z
Chip Deselect to Output in High-Z
Output Enable to Output Valid
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
Output Hold from Address Change
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
(4)
0
0
0
0
0
—
0
6
—
0
7
—
0
8
—
0
8
—
0
(4)
tOLZ
—
5
—
5
—
6
—
7
(4)
tOHZ
tOH
0
0
0
0
0
4
—
—
12
4
—
—
15
4
—
—
17
4
—
—
20
4
(4)
tPU
tPD
0
0
0
0
0
(4)
—
—
—
—
—
Write Cycle
tWC
tAW
tCW
tAS
Write Cycle Time
12
10
10
0
—
—
—
—
—
—
—
—
—
5
15
12
12
0
—
—
—
—
—
—
—
—
—
5
17
13
13
0
—
—
—
—
—
—
—
—
—
7
20
15
15
0
—
—
—
—
—
—
—
—
—
8
25
15
15
0
—
—
—
—
—
—
—
—
—
9
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Valid to End-of-Write
Chip Select to End-of-Write
Address Set-up Time
tWP
tWR
tDW
tDH
tOW
Write Pulse Width
10
0
12
0
13
0
15
0
15
0
Write Recovery Time
Data Valid to End-of-Write
Data Hold Time
7
8
9
9
10
0
0
0
0
0
(4)
Output Active from End-of-Write
Write Enable to Output in High-Z
3
3
3
4
4
(4)
tWHZ
0
0
0
0
0
ns
NOTES:
2964 tbl 010
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. 0°C to +70°C and –55°C to +125°C temperature ranges only.
4. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.
5
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
