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IS62LV1024LL-55H 参数 Datasheet PDF下载

IS62LV1024LL-55H图片预览
型号: IS62LV1024LL-55H
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8低功耗和低Vcc的 [128K x 8 LOW POWER AND LOW Vcc]
分类和应用: 内存集成电路静态存储器光电二极管输出元件输入元件
文件页数/大小: 10 页 / 132 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IS62LV1024L/LL  
WRITE CYCLE NO. 2 (CE1, CE2 Controlled)(1,2)  
t
WC  
ADDRESS  
t
SA  
tHA  
t
SCE1  
CE1  
CE2  
t
SCE2  
t
AW  
(4)  
t
PWE  
WE  
DOUT  
DIN  
t
HZWE  
tLZWE  
HIGH-Z  
DATA UNDEFINED  
t
HD  
t
SD  
DATA-IN VALID  
Notes:  
1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to  
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the  
rising or falling edge of the signal that terminates the Write.  
2. I/O will assume the High-Z state if OE = VIH.  
DATA RETENTION SWITCHING CHARACTERISTICS  
Symbol  
VDR  
Parameter  
Test Condition  
Min.  
Max.  
Unit  
Vcc for Data Retention  
Data Retention Current  
See Data Retention Waveform  
2.0  
3.6  
V
IDR  
Vcc = 2.0V, CE1  
Vcc – 0.2V  
Com. (-L)  
Com. (-LL)  
Ind. (-L)  
—
—
—
—
30  
5
µA  
µA  
µA  
µA  
50  
10  
Ind. (-LL)  
tSDR  
tRDR  
Data Retention Setup Time  
Recovery Time  
See Data Retention Waveform  
See Data Retention Waveform  
0
—
—
ns  
ns  
tRC  
DATA RETENTION WAVEꢀORM (CE1 Controlled)  
t
Data Retention Mode  
t
RDR  
SDR  
V
V
CC  
DR  
3.0V  
2.2V  
CE1 V  
- 0.2V  
CC  
CE1  
GND  
8
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001