IS62LV1024L/LL
TRUTH TABLE
Mode
WE CE1 CE2 OE
I/O Operation
Vcc Current
Not Selected
(Power-down)
X
X
H
X
X
L
X
X
High-Z
High-Z
ISB1, ISB2
ISB1, ISB2
Output Disabled H
L
L
L
H
H
H
H
L
High-Z
DOUT
DIN
ICC
ICC
ICC
Read
Write
H
L
X
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
V
VTERM
VCC
Terminal Voltage with Respect to GND
0.5 to Vcc + 0.5
0.3 to +4.6
40 to +85
65 to +150
0.7
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
V
TBIAS
TSTG
PT
°C
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol
CIN
Parameter
Conditions
VIN = 0V
Max.
Unit
pꢀ
Input Capacitance
Output Capacitance
6
8
COUT
VOUT = 0V
pꢀ
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
VOL
VIH
VIL
ILI
Output HIGH Voltage
VCC = Min., IOH = 1.0 mA
VCC = Min., IOL = 2.1 mA
2.2
V
V
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
0.4
2.2
0.3
1
VCC + 0.3
V
0.4
1
V
GND ≤ VIN ≤ VCC
µA
µA
ILO
Output Leakage
GND ≤ VOUT ≤ VCC
1
1
Notes:
1. VIL = 3.0V for pulse width less than 10 ns.
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
3
ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
