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IC41C8513-35T 参数 Datasheet PDF下载

IC41C8513-35T图片预览
型号: IC41C8513-35T
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8位动态RAM与快速页面模式 [512K x 8 bit Dynamic RAM with Fast Page Mode]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 17 页 / 231 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
 浏览型号IC41C8513-35T的Datasheet PDF文件第1页浏览型号IC41C8513-35T的Datasheet PDF文件第2页浏览型号IC41C8513-35T的Datasheet PDF文件第3页浏览型号IC41C8513-35T的Datasheet PDF文件第4页浏览型号IC41C8513-35T的Datasheet PDF文件第6页浏览型号IC41C8513-35T的Datasheet PDF文件第7页浏览型号IC41C8513-35T的Datasheet PDF文件第8页浏览型号IC41C8513-35T的Datasheet PDF文件第9页  
IC41C8513 and IC41LV8513  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameters  
Rating  
Unit  
VT  
Voltage on Any Pin Relative to GND  
5V  
3.3V  
1.0 to +7.0  
0.5 to +4.6  
V
VCC  
Supply Voltage  
5V  
3.3V  
1.0 to +7.0  
0.5 to +4.6  
V
IOUT  
PD  
Output Current  
50  
mA  
W
oC  
oC  
Power Dissipation  
1
TA  
Commercial Operation Temperature  
Storage Temperature  
0 to +70  
55 to +125  
TSTG  
Note:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent  
damage to the device. This is a stress rating only and functional operation of the device at these  
or any other conditions above those indicated in the operational sections of this specification is  
not implied. Exposure to absolute maximum rating conditions for extended periods may affect  
reliability.  
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
VCC  
Supply Voltage  
5V  
3.3V  
4.5  
3.0  
5.0  
3.3  
5.5  
3.6  
V
VIH  
VIL  
TA  
Input High Voltage  
5V  
3.3V  
2.4  
2.0  
VCC + 1.0  
VCC + 0.3  
V
V
Input Low Voltage  
5V  
3.3V  
1.0  
0.3  
0
0.8  
0.8  
Commercial Ambient Temperature  
70  
oC  
CAPACITANCE(1,2)  
Symbol  
Parameter  
Max.  
Unit  
CIN1  
CIN2  
CIO  
Input Capacitance: A0-A9  
5
7
7
pF  
pF  
pF  
Input Capacitance: RAS, CAS, WE, OE  
Data Input/Output Capacitance: I/O0-I/O7  
Notes:  
1. Tested initially and after any design or process changes that may affect these parameters.  
2. Test conditions: TA = 25oC, f = 1 MHz.  
Integrated Circuit Solution Inc.  
5
DR028-0A 09/25/2001  
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