iC-MH
12 BIT ANGULAR HALL ENCODER
Rev B1, Page 6/23
ELECTRICAL CHARACTERISTICS
Operating conditions:
VPA, VPD = 5 V ±10 %, Tj = -40...125 °C, IBM adjusted to 200 µA , 4 mm NdFeB magnet, unless otherwise noted
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
Line Driver Outputs
P01
Vs()hi
Saturation Voltage hi
Vs() = VPD − V();
CfgDR(1:0) = 00, I() = -4 mA
CfgDR(1:0) = 01, I() = -50 mA
CfgDR(1:0) = 10, I() = -50 mA
CfgDR(1:0) = 11, I() = -20 mA
200
700
700
400
mV
mV
mV
mV
P02
P03
Vs()lo
Isc()hi
Saturation Voltage lo
CfgDR(1:0) = 00, I() = -4 mA
CfgDR(1:0) = 01, I() = -50 mA
CfgDR(1:0) = 10, I() = -50 mA
CfgDR(1:0) = 11, I() = -20 mA
200
700
700
400
mV
mV
mV
mV
Short-Circuit Current hi
V() = 0 V;
CfgDR(1:0) = 00
CfgDR(1:0) = 01
CfgDR(1:0) = 10
CfgDR(1:0) = 11
-12
-120
-120
-60
-4
mA
mA
mA
mA
-50
-50
-20
P04
Isc()lo
Short-Circuit Current lo
V() = VPD;
CfgDR(1:0) = 00
CfgDR(1:0) = 01
CfgDR(1:0) = 10
CfgDR(1:0) = 11
4
12
120
120
60
mA
mA
mA
mA
50
50
20
P05 Ilk()tri
Leakage Current Tristate
Rise-Time lo to hi at Q
TRIHL(1:0) = 11
-100
100
µA
P06
tr()
RL = 100 Ω to VND;
CfgDR(1:0) = 00
CfgDR(1:0) = 01
CfgDR(1:0) = 10
CfgDR(1:0) = 11
5
5
50
5
20
20
350
40
ns
ns
ns
ns
P07
tf()
Fall-Time hi to lo at Q
RL = 100 Ω to VND;
CfgDR(1:0) = 00
CfgDR(1:0) = 01
CfgDR(1:0) = 10
CfgDR(1:0) = 11
5
5
50
5
20
20
350
40
ns
ns
ns
ns
OPERATING REQUIREMENTS: Serial Interface
Operating conditions: VPA, VPD = 5 V ±10 %, Ta = -40...125 °C, IBM calibrated to 200 µA;
Logic levels referenced to VND: lo = 0...0.45 V, hi = 2.4 V...VPD
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Max.
SSI Protocol (ENSSI = 1)
I001 TMAS
I002 tMASh
I003 tMASl
Permissible Clock Period
tout determined by CFGTOS
250
25
2x tout
tout
ns
ns
ns
Clock Signal Hi Level Duration
Clock Signal Lo Level Duration
25
tout
Figure 1: I/O Interface timing with SSI protocol