IC-HT 参数 Datasheet PDF下载

iC-HT

DUAL CW LASER DIODE DRIVER

nar y

limi

pre

Rev A1, Page 7/42

ELECTRICAL CHARACTERISTICS

Operating Conditions: VB = 2.8 . . . 8 V (referenced to GND), Tj = -40 . . . 125 °C unless otherwise stated

Item

No.

114

Symbol

Idc(LDK)

Parameter

LDKx ACC mode current

Conditions

Min.

EC1, EC2, EMC = hi, EACCx = 1,

V(LDKx) = 0.7 V . . . VB - 1.5 V

REFx(9:0) = 0x000, RACCx = 0

REFx(9:0) = 0x3FF, RACCx = 0

REFx(9:0) = 0x000, RACCx = 1

REFx(9:0) = 0x3FF, RACCx = 1

RMDx(7:0) = 0xF0 . . . 0xFF, DISPx = 0

RMDx(7:0) = 0x00 . . . 0x0F, DISPx = 0

∆

R

=

R(n+1)−R(n)

R(n)

Unit

Typ.

Max.

60

750

6

90

350

0.154

-1500

1

82

905

10

113

500

0.220

-500

3.3

120

1400

15

160

650

0.286

0

7

mA

mA

mA

mA

kΩ

kΩ

ppm/K

%

Programmable Resistor

201 Rmda

Resistor at MDAx pin

202

203

Tk

∆

R

Temperature coefficient

Percentual resistor increment

204

301

302

303

Ileak(MDA) MDAx leackage current

R(DAC)

∆

V

V(DAC)

D/A Converter Resolution

Percentual voltage increments

D/A Converter

DISPx = 1

-1

1

10

µA

bit

%

V

V

V

mA

µA

V

mV

µF

ms

D/A Converter

∆

V

=

V

(n+1)−V (n)

V

(n)

0.05

0.09

1.00

0.235

0.10

1.10

1

0.12

1.25

0.4

REFx(9:0) = 0x000 lowest value

REFx(9:0) = 0x3FF highest value

I(NCHK) = 1.0 mA

Check Output NCHK

401

402

403

Vs()lo

Isc()lo

Ilk()

Saturation Voltage lo at NCHK

Leakage Current at NCHK

Short Circuit Current lo at NCHK V(NCHK) = 0.4 . . . 3.3 V

NCHK = 1;

V(NCHK) = 0 . . . 5.5 V

VB = 3.7 . . . 8 V, I(VDD) = -10 . . . 0 mA

NSTBY = hi

VDD unregulated, I(VDD) = -10 . . . 0 mA

NSTBY = hi

Ri(C) < 1

Ω

NSTBY lo

→

hi, no load at VDD,

V(VDD) 0 to 90 %

CVDD = 1 µF

1

9

-10

3

100

33

10

3.5

400

3.3

1

Series Regulator Output VDD

501

502

503

504

V(VDD)

Regulated output voltage

V(VB,VDD) Voltage Drop between VB and

VDD

C(VOUT)

Tvdd

Capacitor at VDD

Settling time VDD

Digital inputs

601

Vt()hi

Input Threshold Voltage hi at

EMC, NCS/A1, MISO/SDA,

MOSI/A0, SCLK/SCL, INS/WKR,

NSTBY, EC1, EC2

Input Threshold Voltage lo at

EMC, NCS/A1, MISO/SDA,

MOSI/A0, SCLK/SCL, INS/WKR,

NSTBY, EC1, EC2

Hysteresis at EMC, NCS/A1,

MISO/SDA, MOSI/A0,

SCLK/SCL, INS/WKR, NSTBY,

EC1, EC2

Pull-Down Current at MOSI/A0,

EC1, EC2

Pull-Down Current at NSTBY

Pull-Up Resistor at SCLK/SCL,

NCS/A1

Pull-Up Resistor at MISO/SDA

EMC = hi, INS/WKR = lo

EMC = hi, INS/WKR = hi

Vt()hys = Vt()hi - Vt()lo

0.7

2

V

602

Vt()lo

V

603

Vt()hys

100

mV

604

605

606

607

608

609

Ipd()

Ipd()

Rpu()

Rpu()

Er()

Voc()

V() = 0.4 V . . . VDD

V() = 0.4 V . . . VB

1

1

80

8

53

52

30

39

150

20

100

54

32

41

50

50

260

50

174

56

34

43

µA

µA

kΩ

kΩ

kΩ

% VDD

% VDD

% VDD

Safe enable threshold voltage at Rising

Falling

EMC, INS/WKR

Open Circuit Voltage at EMC,

INS/WKR