iC-HG
3 A LASER SWITCH
Rev A1, Page 6/19
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3.0...5.5 V, AGND1. . . 6 = GND, Tj = -25...125 °C unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
Input EN1. . . 6 (x = 1. . . 6)
201 Vt(TTL)hi Input Threshold Voltage hi
202 Vt(TTL)lo Input Threshold Voltage lo
203 Vhys(TTL) Hysteresis
V(ELVDS) < 35% VDD, TTL
V(ELVDS) < 35% VDD, TTL
2
V
V
0.8
50
Vhys() = Vt()hi − Vt()lo;
mV
V(ELVDS) < 35% VDD, TTL
204 I(ENx)
205 R(ENx)
Pulldown Current
V(ELVDS) < 35% VDD, V() = 0.8 V. . . VDD, TTL
4
30
80
28
µA
Differential Input Impedance at
ENx
V(ELVDS) > 65% VDD, V(ENx) < VDD − 1.4 V,
14
kΩ
LVDS
206 Vdiff
207 V()
Differential Voltage
Vdiff = |V(EN1,3,5) − V(EN2,4,6)|;
200
0.6
mV
V
V(ELVDS) > 65% VDD, LVDS
Input Voltage Range
V(ELVDS) > 65% VDD, LVDS
VDD −
1.4
Input ELVDS
301 V(ELVDS) Voltage at ELVDS
302 Ri(ELVDS)
ELVDS open
48
35
16
50
50
20
52
70
24
%VDD
kΩ
303 Vt(ELVDS) Threshold Voltage TTL Fast to
TTL Slow
%VDD
304 Vt(ELVDS) Threshold Voltage TTL Slow to
Error
36
56
74
10
40
60
80
25
44
64
84
50
%VDD
%VDD
%VDD
mV
305 Vt(ELVDS) Threshold Voltage Error to LVDS
Slow
306 Vt(ELVDS) Threshold Voltage LVDS Slow to
LVDS Fast
307 Vhys()
Hysteresis
Ouput NER
401 Vsat(NER) Saturation Voltage at NER
ELVDS open, I(NER) = 2 mA
ELVDS open, V(NER) > 0.6 V
0.6
20
V
402 I(NER)
Overtemperature
501 Toff
Current in NER
3
9
mA
Overtemperature Shutdown
Overtemperature Release
Hysteresis
rising temperature
falling temperature
Toff − Ton
130
120
5
170
160
°C
°C
°C
502 Ton
503 Thys
Power On
601 VON
602 VOFF
603 Vhys
Power On Voltage VDD
Power Down Voltage VDD
Hysteresis
rising voltage
falling voltage
2.9
V
V
1.5
50
500
mV
ICHAUS [ IC-HAUS GMBH ]
