iC-HG
3 A LASER SWITCH
Rev A2, Page 6/21
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3.0...5.5 V, AGND1. . . 6 = GND, Tj = -25...125 °C unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
Total Device (x = 1. . . 6)
001 VDD
Permissible Supply Voltage
3
5.5
10
V
mA
mA
V
002 I(VDD)
003 I(VDD)
004 V(LDKx)
005 V(NER)
006 Vc()hi
007 Vc(NER)
Supply Current in VDD
CW operation
Supply Current in VDD
pulsed operation, f(ENx) = 200 MHz
700
12
Permissible Voltage at LDKx
Permissible Voltage at NER
Clamp Voltage hi at LDKx
Clamp Voltage hi at NER
-0.3
-0.3
12.1
7
5.5
18
V
I(LDK) = 10 mA
I(NER) = 1 mA
V
15
18
V
008 Vc(CIx)hi Clamp Voltage hi at CIx
Vc(CIx) = V(CIx) − VDD;
0.3
1.6
V
I(CI) = 10 mA, other pins open
009 Vc()hi
010 Vc()lo
Clamp Voltage hi at ENx, ELVDS Vc() = V() − VDD;
0.8
3
V
V
I() = 1 mA, other pins open
Clamp Voltage lo at VDD, LDKx, I() = -10 mA, other pins open
CIx, ENx, AGNDx, ELVDS, NER
-1.6
-0.3
Laser Control LDK1. . . 6, CI1. . . 6 (x = 1. . . 6)
101 Icw(LDKx) Permissible CW Current in LDKx
(per channel)
500
1.5
mA
V
102 Vs(LDKx) Saturation Voltage at LDKx
I(LDKx) = 450 mA,
V(CIx) = V(CIx)@I(LDKx) = 500 mA
103 I0(LDKx)
104 tr()
Leakage Current in LDKx
ENx = lo, V(LDKx) = 12 V
100
1
µA
ns
LDKx Current Rise Time Fast
Iop(LDKx) = 500 mA, I(LDKx): 10% → 90% Iop,
V(ELVDS) = 0 V or VDD
105 tf()
106 tr()
107 tf()
108 tr()
LDKx Current Fall Time Fast
LDKx Current Rise Time Slow
LDKx Current Fall Time Slow
LDKx Current Rise Time Slow
Iop(LDKx) = 500 mA, I(LDKx): 90% → 10% Iop,
1
ns
ns
ns
ns
V(ELVDS) = 0 V or VDD
Iop(LDKx) = 500 mA, I(LDKx): 10% → 90% Iop,
5
5
10
10
30
40
40
90
V(ELVDS) = 30% VDD or 70% VDD, VDD = 5 V
Iop(LDKx) = 500 mA, I(LDKx): 90% → 10% Iop,
V(ELVDS) = 30% VDD or 70% VDD, VDD = 5 V
Iop(LDKx) = 500 mA, I(LDKx): 10% → 90% Iop,
V(ELVDS) = 30% VDD or 70% VDD,
VDD = 3.3 V
10
109 tf()
110 tp()
LDKx Current Fall Time Slow
Iop(LDKx) = 500 mA, I(LDKx): 90% → 10% Iop,
V(ELVDS) = 30% VDD or 70% VDD,
VDD = 3.3 V
10
3
30
5
90
14
ns
ns
Propagation Delay Fast
V(ENx) → I(LDKx)
V(ELVDS) = 0 V or VDD, Differential LVDS Rise
and Fall Time < 0.5 ns
111 CR()
Current Matching all Channels
Permissible Voltage at CIx
Threshold Voltage at CIx
Operating Voltage at CIx
Pull-Down Current at CIx
Capacity at CIx
0.9
-0.3
0.5
1.1
VDD
1.2
2.9
5
112 V(CIx)
113 Vt(CIx)
114 V(CIx)
115 Ipd(CIx)
116 C(CIx)
V
V
I(LDKx) < 5 mA
I(LDKx) = 500 mA, V(LDKx) > 1.8 V
V(CIx) = 0.5. . . 5.5 V
V(CIx) = 2 V
2
V
1
2.5
635
µA
pF
V
500
12.5
760
20
117 Vc(LDKx) Clamp Voltage at LDKx
I(LDKx) = 100 mA, tclamp < 1 ms,
tclamp/T < 1:100
Input EN1. . . 6 (x = 1. . . 6)
201 Vt(TTL)hi Input Threshold Voltage hi
202 Vt(TTL)lo Input Threshold Voltage lo
203 Vhys(TTL) Hysteresis
V(ELVDS) < 35% VDD, TTL
V(ELVDS) < 35% VDD, TTL
2
V
V
0.8
50
Vhys() = Vt()hi − Vt()lo;
mV
V(ELVDS) < 35% VDD, TTL
204 I(ENx)
205 R(ENx)
Pulldown Current
V(ELVDS) < 35% VDD, V() = 0.8 V. . . VDD, TTL
4
30
80
28
µA
Differential Input Impedance at
ENx
V(ELVDS) > 65% VDD, V(ENx) < VDD − 1.4 V,
14
kΩ
LVDS
206 Vdiff
Differential Voltage
Vdiff = |V(EN1,3,5) − V(EN2,4,6)|;
200
mV
V(ELVDS) > 65% VDD, LVDS
ICHAUS [ IC-HAUS GMBH ]
