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IBMN612405GT3B-8N 参数 Datasheet PDF下载

IBMN612405GT3B-8N图片预览
型号: IBMN612405GT3B-8N
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 79 页 / 1280 K
品牌: IBM [ IBM ]
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IBMN612404GT3B  
IBMN612804GT3B  
128Mb Double Data Rate Synchronous DRAM  
Preliminary  
Electrical Characteristics & AC Timing for DDR266/DDR200 - Absolute  
Specifications  
(0 °C TA 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics) (Part 2 of 2)  
DDR266A (7N)  
DDR266B (75N)  
DDR200 (8N)  
Symbol  
Parameter  
Unit  
Notes  
Min  
Max  
Min  
Max  
Min  
Max  
2, 3, 4,  
11, 13,  
14  
Address and control input setup time (fast  
slew rate)  
t
0.9  
0.9  
1.1  
ns  
ns  
IS  
2, 3, 4,  
12, 13,  
14, 17  
Address and control input hold time (slow  
slew rate)  
t
1.0  
1.0  
1.1  
1.1  
IH  
2, 3, 4,  
12, 13,  
14, 17  
Address and control input setup time (slow  
slew rate)  
t
1.0  
2.2  
1.0  
2.2  
ns  
ns  
IS  
2, 3, 4,  
14  
t
Input pulse width  
IPW  
t
Read preamble  
0.9  
0.40  
45  
1.1  
0.60  
0.9  
0.40  
45  
1.1  
0.60  
0.9  
0.40  
50  
1.1  
0.60  
t
1, 2, 3, 4  
1, 2, 3, 4  
RPRE  
CK  
t
Read postamble  
t
RPST  
CK  
t
Active to Precharge command  
120,000  
120,000  
120,000  
ns 1, 2, 3, 4  
ns 1, 2, 3, 4  
RAS  
Active to Active/Auto-refresh command  
period  
t
65  
65  
70  
RC  
Auto-refresh to Active/Auto-refresh com-  
mand period  
t
75  
20  
20  
75  
20  
20  
80  
20  
20  
ns 1, 2, 3, 4  
ns 1, 2, 3, 4  
ns 1, 2, 3, 4  
RFC  
t
Active to Read or Write delay  
RCD  
Active to Read Command with Autopre-  
charge  
t
RAP  
t
Precharge command period  
Active bank A to Active bank B command  
Write recovery time  
20  
15  
15  
20  
15  
15  
20  
15  
15  
ns 1, 2, 3, 4  
ns 1, 2, 3, 4  
ns 1, 2, 3, 4  
RP  
t
RRD  
t
WR  
DAL  
WTR  
(t /t  
)
(t /t  
)
(t /t  
)
WR CK  
WR CK  
WR CK  
Auto precharge write recovery + precharge  
time  
1, 2, 3,  
4, 16  
t
+
+
+
t
CK  
(t /t  
)
(t /t  
)
(t /t  
)
RP CK  
RP CK  
RP CK  
t
Internal write to read command delay  
Exit self-refresh to non-read command  
Exit self-refresh to read command  
1
1
1
t
1, 2, 3, 4  
CK  
t
t
75  
75  
80  
ns 1, 2, 3, 4  
XSNR  
XSRD  
200  
200  
200  
t
1, 2, 3, 4  
CK  
1, 2, 3,  
4, 8  
t
Average Periodic Refresh Interval  
QFC setup time on Read  
15.6  
1.1  
0.6  
4.0  
2.0  
15.6  
1.1  
0.6  
4.0  
2.0  
15.6  
1.1  
0.6  
4.0  
2.0  
µs  
REFI  
1, 2, 3,  
4, 15  
t
0.9  
0.4  
0.9  
0.4  
0.9  
0.4  
t
QCS  
QCH  
CK  
1, 2, 3,  
4, 15  
t
QFC hold time on Read  
t
CK  
Delay from CK edge of write command to  
QFC low on write  
1, 2, 3,  
4, 9, 15  
t
ns  
ns  
QCSW  
1, 2, 3,  
4, 10, 15  
t
QFC hold time on write  
1.25  
1.25  
1.25  
QCHW  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0566.F39350B  
1/01  
Page 60 of 79  
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