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IBMN325404CT3B-75H 参数 Datasheet PDF下载

IBMN325404CT3B-75H图片预览
型号: IBMN325404CT3B-75H
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 66 页 / 1699 K
品牌: IBM [ IBM ]
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IBMN325164CT3  
IBMN325804CT3  
IBMN325404CT3  
Preliminary  
256Mb Synchronous DRAM - Die Revision B  
Command Truth Table (See note 1)  
CKE  
A12,  
BA0,  
Function  
Device State  
CS RAS CAS WE  
DQM  
A10  
A11,  
Notes  
Previous Current  
BA1  
A9-A0  
Cycle  
Cycle  
Mode Register Set  
Auto (CBR) Refresh  
Entry Self Refresh  
Idle  
Idle  
Idle  
H
H
H
X
H
L
L
L
L
H
L
L
L
L
L
L
H
H
X
H
X
X
X
OP Code  
X
X
X
X
X
X
L
L
X
H
X
H
Idle (Self-  
Refresh)  
Exit Self Refresh  
L
H
X
X
X
X
See Current  
State Table  
Single Bank Precharge  
Precharge all Banks  
H
H
X
X
L
L
L
L
H
H
L
L
X
X
BS  
X
L
X
X
2
See Current  
State Table  
H
Bank Activate  
Write  
Idle  
H
H
H
H
H
H
H
H
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
H
L
H
L
H
L
X
X
X
X
X
X
X
X
BS  
BS  
BS  
BS  
BS  
X
Row Address  
2
2
2
2
2
Active  
H
H
H
H
H
H
X
L
H
L
Column  
Column  
Column  
Column  
X
Write with Auto-Precharge Active  
Read Active  
L
L
L
H
H
L
Read with Auto-Precharge Active  
Reserved  
L
H
X
X
X
H
H
X
No Operation  
Any  
Any  
H
X
X
X
Device Deselect  
X
X
Clock Suspend Mode  
Entry  
Active  
H
L
X
X
X
X
X
X
X
X
4
Clock Suspend Mode Exit Active  
Data Write/Output Enable Active  
Data Mask/Output Disable Active  
L
H
H
H
X
X
X
X
X
H
L
X
X
X
X
H
X
H
X
X
X
X
H
X
H
X
X
X
X
H
X
H
X
L
X
X
X
X
X
X
X
X
X
5
H
Power Down Mode Entry Idle/Active  
H
L
L
X
X
X
X
X
X
X
X
6, 7  
6, 7  
H
L
Any (Power  
Power Down Mode Exit  
Down)  
H
1. All of the SDRAM operations are defined by states of CS, WE, RAS, CAS, and DQM at the positive rising edge of the clock.Oper-  
ation of both decks of a stacked device at the same time is allowed, depending on the operation being performed on the other  
deck. Refer to the Current State Truth Table.  
2. Bank Select (BA0, BA1): BA0, BA1 = 0,0 selects bank 0; BA0, BA1 = 1,0 selects bank 1; BA0, BA1 = 0,1 selects bank 2; BA0, BA1  
= 1,1 selects bank 3.  
3. Not applicable.  
4. During normal access mode, CKE is held high and CK is enabled. When it is low, it freezes the internal clock and extends data  
Read and Write operations. One clock delay is required for mode entry and exit.  
5. The DQM has two functions for the data DQ Read and Write operations. During a Read cycle, when DQM goes high at a clock tim-  
ing the data outputs are disabled and become high impedance after a two-clock delay. DQM also provides a data mask function for  
Write cycles. When it activates, the Write operation at the clock is prohibited (zero clock latency).  
6. All banks must be precharged before entering the Power Down Mode. (If this command is issued during a burst operation, the  
device state will be Clock Suspend Mode.) The Power Down Mode does not perform any refresh operations; therefore the device  
can’t remain in this mode longer than the Refresh period (t  
) of the device. One clock delay is required for mode entry and exit.  
REF  
7. A No Operation or Device Deselect Command is required on the next clock edge following CKE going high.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0608.F39375A  
10/00  
Page 29 of 66  
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