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IBMN312804CT3B-75H 参数 Datasheet PDF下载

IBMN312804CT3B-75H图片预览
型号: IBMN312804CT3B-75H
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 66 页 / 2855 K
品牌: IBM [ IBM ]
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IBMN312164CT3  
IBMN312404CT3  
IBMN312804CT3  
128Mb Synchronous DRAM - Die Revision B  
Preliminary  
Read Interrupted by a Write  
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output drivers) in a  
high impedance state to avoid data contention on the DQ bus. If a Read Command will issue data on the first  
or second clocks cycles of the write operation, DQM is needed to insure the DQs are tri-stated. After that  
point the Write Command will have control of the DQ bus.  
Minimum Read to Write Interval  
(Burst Length = 4, CAS latency = 2, 3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CK  
DQM high for CAS latency = 2 only.  
Required to mask first bit of READ data.  
DQM  
NOP  
READ A  
WRITE A  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
CAS latency = 2  
DIN A  
DIN A  
DIN A  
DIN A  
DIN A  
DIN A  
0
0
1
2
3
3
tCK2, DQs  
CAS latency = 3  
DIN A  
DIN A  
2
1
tCK3, DQs  
: “H” or “L”  
©IBM Corporation. All rights reserved.  
06K7582.H03335A  
01/01  
Use is further subject to the provisions at the end of this document.  
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