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IBMB3N64644HCB-75AT 参数 Datasheet PDF下载

IBMB3N64644HCB-75AT图片预览
型号: IBMB3N64644HCB-75AT
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 18 页 / 329 K
品牌: IBM [ IBM ]
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IBMB3N64644HCB  
IBMB3N64734HCB  
Preliminary  
64M x 64/72 Two-Bank Unbuffered SDRAM Module  
AC Characteristics (TA= 0 to +70°C, VDD= 3.3V ± 0.3V)  
1. An initial pause of 200µs, with DQMB0-7 and CKE0-CKE1 held high, is required after power-up. A Pre-  
charge All Banks command must be given followed by a minimum of eight Auto (CBR) Refresh cycles  
before or after the Mode Register Set operation.  
2. The Transition time is measured between V and V (or between V and V ).  
IH  
IL  
IL  
IH  
3. In addition to meeting the transition rate specification, the clock and CKE must transit between V and  
IH  
V (or between V and V ) in a monotonic manner.  
IL  
IL  
IH  
4. AC timing tests have V = 0.8 V and V = 2.0 V with the timing referenced to the 1.40V crossover point  
IL  
IH  
5. AC measurements assume t =1.2 ns.  
T
AC Characteristics Diagrams  
tT  
tCKH  
VIH  
1.4V  
VIL  
Clock  
tCKL  
tSETUP  
tHOLD  
Output  
Zo = 50Ω  
50pF  
Input  
1.4V  
AC Output Load Circuit  
tOH  
tAC  
tLZ  
Output  
1.4V  
06K3767.H01636  
11/00  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
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