IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au.
IBM11S2325HP IBM11S4325HP
IBM11S2325HM IBM11S4325HM
2M/4M x 32 SO DIMM Module
Features
• 72-Pin Small Outline Dual-In-Line
Memory Module
• Performance:
-60
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
Access Time From Address
t
RC
Cycle Time
t
HPC
EDO Mode Cycle Time
60ns
15ns
30ns
-6R
60ns
17ns
30ns
-70
70ns
20ns
35ns
•
•
•
•
•
•
•
•
•
•
104ns 104ns 124ns
25ns
25ns
30ns
High Performance CMOS process
Single 3.3
±
0.3V or 5.0
±
0.25V Power Supply
Low active current consumption
All inputs & outputs are LVTTL(3.3V) or TTL(5V)
compatible
Extended Data Out (EDO) access cycle
Refresh Modes: RAS-Only, CBR, Hidden and
Self Refresh
2048 refresh cycles distributed across 128ms
11/10 Addressing (Row/Column)
Optimized for use in byte-write non-parity appli-
cations.
Au contacts
Description
The IBM11S4325HP/M are 16MB industry standard
72-pin 4-byte small outline dual in-line memory mod-
ules (SO DIMMs). The modules are organized as
4Mx32 high speed memory arrays that are intended
for use in 16, 32 and 64 bit applications. They are
manufactured with eight 2Mx8 TSOP devices, each
in a 400mil package. The IBM11S1325HP/M are
8MB half populated versions, manufactured with
four 2Mx8 TSOP devices.
The use of EDO DRAMs allows for a reduction in
cycle time from 40ns (Fast Page) to 25ns (EDO,
60/6Rns sort). The use of TSOP packages allows
for tight DIMM spacing (.3” on center). Input loading
is consistent with 4Mb-based assemblies due to the
addition of discrete capacitors maximizing compati-
bility at the system level.
These assemblies are intended for use in space
constrained and/or low power applications.
The IBM 72-Pin SO DIMMs provide a high perfor-
mance, flexible 4-byte interface in a 2.35” long foot-
print.
Card Outline
Detail A
See Detail A
for 5.0V version
(Front) 1
(Back) 2
71
72
75H1718
SA14-4471-00
Revised 4/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
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