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IBM11M4730H-70 参数 Datasheet PDF下载

IBM11M4730H-70图片预览
型号: IBM11M4730H-70
PDF下载: 下载PDF文件 查看货源
内容描述: [Memory IC, 4MX72, CMOS, PDMA168]
分类和应用: 光电二极管
文件页数/大小: 26 页 / 284 K
品牌: IBM [ IBM ]
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IBM11M4730H
IBM11M4730HB
4M x 72 DRAM MODULE
Read Cycle
-60
Symbol
t
RAC
t
CAC
t
AA
t
OEA
t
RCS
t
RCH
t
RRH
t
RAL
t
CAL
t
CLZ
t
ROH
t
OH
t
OHO
t
OEZ
t
CDD
t
OFF
1.
2.
3.
4.
5.
Access Time from RAS
Access Time from CAS
Access Time from Address
Access Time from OE
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
Column Address to CAS Lead Time
CAS to Output in Low-Z
RAS Hold to Output Enable
Output Data Hold Time
Output Data Hold Time from OE
Output Buffer Turn-off Delay from OE
CAS to D
IN
Delay Time
Output Buffer Turn-off delay
Parameter
Min
2
2
0
35
35
2
2
2
2
20
2
Max
60
20
35
20
20
20
Min
2
2
0
40
40
2
2
2
2
20
2
Max
70
25
40
25
20
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
6
4
3
3
1, 2
1, 2
1, 2
1, 2
-70
Unit
Notes
Measured with the specified current load and 100pF.
Access time is determined by the latter of t
RAC
, t
CAC
, t
CPA
, t
AA,
t
OEA
.
Either t
RHC
or t
RRH
must be satisfied.
This timing parameter is not applicable to this product, but applies to a related product in this family.
t
OFF
(max) and t
OEZ
(max) define the time at which the output achieves the open circuit condition and is not referenced to output
voltage levels.
6. Either t
CDD
or t
ODD
must be satisfied.
54H8529
SA14-4637-01
Released 3/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
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